Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.
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See all 16 reviews. Discover Prime Book Box for Kids. Try the Kindle edition and experience these great reading features: Both the ideas and the presentation are first-rate.
A Circuits and Systems Perspective 4th Edition.
Fundamentals of Modern VLSI Devices: Yuan Taur: : Books
By including this material, this text is now positioned to be the primary text for typical graduate device physics courses, and will meet the needs of both students and instructors through it’s combination of detailed, well-written, and easy to follow descriptions of device operation, coupled with exercises and assignments for testing understanding of the relevant course material.
Taur has a few papers, available online for free download at IBM’s fundamenrals and development journal,it will be a good idea to explore it and the other allied material appearing there. Ning Limited preview – Zhihong added it Sep 30, Just fuhdamentals moment while we sign you in to your Goodreads account. The feel you get when you read the book is somewhat hard to write, it has all the relevant funsamentals but lacks a physical insight.
If you are a seller for this product, would you like to suggest updates through seller support? For example the quantum confinement of the inversion layer is so briefly described that someone reading the topic for the first time will never fumdamentals able to make sense out of it.
It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry. Sandeep Sharma marked it as to-read Jul 04, There was a problem filtering reviews right now.
Fundamentals of Modern VLSI Devices
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I must revise my previous comment about this book. Watson Research Center, New York, where he has worked for over 35 years. I am suprised to find this 2nd edition was re-printed in For the starter I will suggest to pick up Tsividis book on “Operation and modeling of MOS Transistor” and concurrently try the present volume.
Two new chapters on memory and silicon-on-insulator devices have been included along with nine additional appendixes.
Fundamentals of Modern VLSI Devices – Yuan Taur, Tak H. Ning – Google Books
Review “For the past several years, I’ve taught from Taur and Ning’s book because it’s best at connecting advanced device physics to real world device, circuit, and system technology. But one thing make me to rate one star to 4 star. Joel rated it really liked it Dec 29, Alexa Actionable Analytics for the Web. Aziziah Amin marked it as to-read Mar 29, To see what your friends thought of this book, please sign up.
It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.