Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
|Published (Last):||10 January 2012|
|PDF File Size:||9.99 Mb|
|ePub File Size:||17.35 Mb|
|Price:||Free* [*Free Regsitration Required]|
View PDF for Mobile. Elcodis is a trademark of Elcodis Company Ltd. Copy your embed code and put on your site: Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8.
Operating Junction and Storage Temperature Range. Body Diode Reverse Recovery Charge. N-channel V – 0.
Download datasheet Kb Share this page. Pulsed Diode Forward Current a. Capacitance variations Figure Prev Next General features. The maximum ratings related to soldering conditions are also marked on the inner box label.
Pulsed Drain Current a. Pulse width limited by safe operating area 2. IRF datasheet and specification datasheet Download datasheet.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Static drain-source on resistance Figure I SM p – n junction diode. Case-to-Sink, Flat, Greased Surface.
Thermal impedance for TO Figure 4. Unclamped inductive waveform Figure The low thermal resistance. The TOAB package is universally preferred for all. Gate charge test circuit Figure Test circuit for inductive load switching and diode recovery times Figure Soldering Recommendations Peak Temperature.
L S die contact. IRF datasheet and specification datasheet. Single Pulse Avalanche Energy b. This datasheet is subject to change without notice.
IRF NTE Equivalent NTE POWER MOSFET N-CHANN – Wholesale Electronics
Drain-Source Body Diode Characteristics. Repetitive Avalanche Current a. Switching times test circuit for resistive load Figure All other trademarks are the property of their respective owners. Safe operating area for TO Figure 3. Unclamped Inductive load test circuit Figure Electrical characteristics Figure These packages have a Lead-free second level interconnect. Contents Contents 1 Electrical darasheet. V DS Temperature Coefficient.
IRF Hoja de datos ( Datasheet PDF ) – N-Channel Power MOSFETs
Gate charge vs gate-source voltage Figure Zero Gate Voltage Drain Current. Body Diode Reverse Recovery Time. Continuous Source-Drain Diode Current. Repetitive Avalanche Energy a. Vishay Intertechnology Electronic Components Datasheet. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Repetitive rating; pulse width datashewt by maximum junction temperature see fig.